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| PD - 95168 SI4410DYPBF l l l l l l N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free HEXFET(R) Power MOSFET A A D D D D S S S G 1 8 7 2 VDSS = 30V 3 6 4 5 RDS(on) = 0.0135 Description This N-channel HEXFET(R) Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low onresistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications. Top View SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C dv/dt EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. 30 10 8.0 50 2.5 1.6 0.02 5.0 400 20 -55 to + 150 Units V A W W/C V/ns mJ V C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 50 Units C/W www.irf.com 1 09/22/04 SI4410DYPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 30 --- --- --- 1.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.029 --- V/C Reference to 25C, ID = 1mA 0.010 0.0135 VGS = 10V, ID = 10A 0.015 0.020 VGS = 4.5V, ID = 5.0A --- --- V VDS = VGS, ID = 250A 35 --- S VDS = 15V, ID = 10A --- 1.0 VDS = 30V, VGS = 0V A --- 25 VDS = 30V, VGS = 0V, TJ = 55C --- -100 VGS = -20V nA --- 100 VGS = 20V 30 45 ID = 10A 5.4 --- nC VDS = 15V 6.5 --- VGS = 10V, See Fig. 10 11 --- VDD = 25V 7.7 --- ID = 1.0A ns 38 --- RG = 6.0 44 --- RD = 25, 1585 --- VGS = 0V 739 --- pF VDS = 15V 106 --- = 1.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics IS ISM VSD trr Parameter Continuous Source Current (Diode Conduction) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Min. Typ. Max. Units --- --- 0.7 50 2.3 A 50 1.1 80 V ns Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 2.3A, VGS = 0V TJ = 25C, IF = 2.3A D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 8.0mH R G = 25, IAS = 10A. (See Figure 15) Pulse width 300s; duty cycle 2%. When mounted on FR4 Board, t 10 sec ISD 2.3A, di/dt 130A/s, VDD V(BR)DSS, TJ 150C 2 www.irf.com SI4410DYPBF 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 100 4.5V 4.5V 10 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 10 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 TJ = -55C TJ = 25C TJ = 150C RDS(on) , Drain-to-Source On Resistance (Normalized) 10A ID = 11A I D , Drain-to-Source Current (A) 1.5 100 1.0 0.5 10 4 8 V DS = 25V 20s PULSE WIDTH 12 16 A 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 SI4410DYPBF 2400 2000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 10A VDS = 24V VDS = 15V 16 C, Capacitance (pF) 1600 Ciss 12 1200 Coss 800 8 400 4 Crss 0 1 10 100 0 0 10 20 30 40 50 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 TJ = 150 C TJ = 25 C 1 I D , Drain Current (A) 100 10us 10 100us 1ms 0.1 0.4 V GS = 0 V 0.5 0.6 0.7 0.8 0.9 1.0 1 0.1 TC = 25 C TJ = 150 C Single Pulse 1 10 10ms 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com SI4410DYPBF 10.0 100 8.0 80 ID , Drain Current (A) Power ( W) 6.0 60 4.0 40 2.0 20 0.0 25 50 75 100 125 150 0 0.01 0.1 1 10 100 A TC , Case Temperature ( C) Time (sec) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Typical Power Vs. Time 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 PDM t1 0.1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 SI4410DYPBF 0.20 R DS(on) , Drain-to-Source On Resistance () RDS(on) , Drain-to-Source On Resistance () 0.03 0.16 0.02 0.12 I D = 10A 0.01 0.08 VGS = 10V VGS = 4.5V 0.04 0.00 0 10 20 30 40 50 A 0.00 3 4 5 6 7 8 9 10 A ID , Drain Current (A) V GS , Gate-to-Source Voltage (V) Fig 12. Typical On-Resistance Vs. Drain Current Fig 13. Typical On-Resistance Vs. Gate Voltage 3.0 1000 EAS , Single Pulse Avalanche Energy (mJ) TOP 800 V GS(th) , Variance ( V) BOTTOM ID 4.5A 8.0A 10A 2.5 600 I D =250A 2.0 400 200 1.5 -60 A -40 -20 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 TJ , Junction Temperature (C) Starting TJ , Junction Temperature ( C) Fig 14. Typical Threshold Voltage Vs.Temperature Fig 15. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com SI4410DYPBF SO-8 Package Outline Dimensions are shown in millimeters (inches) D A 5 B DIM A A1 b INCHES MIN .0532 .0040 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILL IME T E RS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 8 6 E 1 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 2 3 4 .050 B AS IC .025 B AS IC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45 8X L 7 8X c NOT E S : 1. DIME NS IONING & T OLE RANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIME NS ION: MILLIMET E R 3. DIME NS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONF ORMS T O JEDE C OUT LINE MS -012AA. 5 DIME NS ION DOES NOT INCLUDE MOLD PROT RU S IONS . MOLD PROT RUS IONS NOT T O E XCEED 0.15 [.006]. 6 DIME NS ION DOES NOT INCLUDE MOLD PROT RU S IONS . MOLD PROT RUS IONS NOT T O E XCEED 0.25 [.010]. 7 DIME NS ION IS T HE LE NGT H OF LEAD F OR S OLDE RING T O A S U BS T RAT E . 3X 1.27 [.050] 6.46 [.255] F OOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking E XAMPLE : T HIS IS AN IRF 7101 (MOS F E T ) DAT E CODE (YWW) P = DE S IGNAT E S L E AD-F RE E PRODUCT (OPT IONAL) Y = L AS T DIGIT OF T HE YE AR WW = WE E K A = AS S E MB L Y S IT E CODE L OT CODE PART NU MB E R INT E RNAT IONAL RE CT IF IE R LOGO XXXX F 7101 www.irf.com 7 SI4410DYPBF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04 8 www.irf.com |
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